Electron microscope study of intrinsic and extrinsic stacking faults, and twins in SOS at the early stage of epitaxial growth
- 1 December 1978
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 45, 426-434
- https://doi.org/10.1016/0022-0248(78)90471-2
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Early growth of silicon on sapphire. I. Transmission electron microscopyJournal of Applied Physics, 1976
- Misfit dislocations in heteroepitaxial Si on sapphireApplied Physics Letters, 1976
- Interface properties of Si on sapphire and spinelJournal of Vacuum Science and Technology, 1976
- Electron microscope study of epitaxial silicon films on sapphire and diamond substratesThin Solid Films, 1976
- Lattice resolution observations on the structure of twin boundaries, faults and dislocations in epitaxial siliconActa Metallurgica, 1972
- Physical and Electrical Investigations on Silicon Epitaxial Layers on Sapphire SubstratesJournal of the Electrochemical Society, 1970