SiGe heterojunction bipolar transistors—The noise perspective
- 31 October 1997
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 41 (10) , 1485-1492
- https://doi.org/10.1016/s0038-1101(97)00094-4
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- A low-noise active receiving antenna using a SiGe HBTIEEE Microwave and Guided Wave Letters, 1997
- Low-frequency noise characteristics of UHV/CVD epitaxial Si- and SiGe-base bipolar transistorsIEEE Electron Device Letters, 1996
- SiGe-HBTs with high
f
T
at moderatecurrentdensitiesElectronics Letters, 1994
- Noise characterisation of Si/SiGe heterojunction bipolar transistors at microwave frequenciesElectronics Letters, 1992
- Limitations of Nielsen's and related noise equations applied to microwave bipolar transistors, and a new expression for the frequency and current dependent noise figureSolid-State Electronics, 1977