Long wavelength infra-red photoconductive InAsSb detectors grown in Si wells by molecular beam epitaxy
- 15 February 1990
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 26 (4) , 259-261
- https://doi.org/10.1049/el:19900173
Abstract
InAs0.05Sb0.95 photoconductive infra-red detectors have been grown by molecular beam epitaxy in recessed Si wells. The embedded devices exhibited a voltage responsivity of 420V/W at 77K and 300meV photon energy with a load resistor of 100Ω and a bias voltage of 1.5V.Keywords
This publication has 0 references indexed in Scilit: