Plasma chemical vapor deposition and properties of hard C3N4 thin films

1 November 1995

journal article
Published by American Vacuum Society in Journal of Vacuum Science & Technology A

Vol. 13 (6) , 2914-2919
https://doi.org/10.1116/1.579613

Abstract

Compact thin films of stoichiometric, amorphous C₃N₄ have been prepared by means of chemical transport of carbon in intense nitrogen glow discharge at relatively high deposition temperature of about 800 °C. Their hardness reached 2500 Vickers (kg/mm²).

Keywords

AMORPHOUS STATE
CARBON NITRIDES
CVD
GLOW DISCHARGES
HARDNESS
STOICHIOMETRY
SYNTHESIS
TEMPERATURE RANGE 400−1000 K
C3N4

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