Objective comparison of scanning ion and scanning electron microscope images
- 1 October 1997
- Vol. 19 (7) , 489-497
- https://doi.org/10.1002/sca.4950190707
Abstract
Common and different aspects of scanning electron microscope (SEM) and scanning ion microscope (SIM) images are discussed from a viewpoint of interaction between ion or electron beams and specimens. The SIM images [mostly using 30 keV Ga focused ion beam (FIB)] are sensitive to the sample surface as well as to low‐voltage SEM images. Reasons for the SIM images as follows: (1) no backscattered‐electron excitation; (2) low yields of backscattered ions; and (3) short ion ranges of 20–40nm, being of the same order of escape depth of secondary electrons (SE) [=(3–5) times the SE mean free path]. Beam charging, channeling, contamination, and surface sputtering are also commented upon.Keywords
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