Monolithically integrated InGaAs PIN-InP JFET amplifier with high sensitivity
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (12) , 2434-2435
- https://doi.org/10.1109/16.8845
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- A low-power high-speed ion-implanted JFET for InP-based monolithic optoelectronic IC'sIEEE Electron Device Letters, 1987