Use of a carbon-alloyed graded-band-gap layer at the p/i interface to improve the photocharacteristics of amorphous silicon alloyed p-i-n solar cells prepared by photochemical vapor deposition

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Abstract
Amorphous silicon alloyed p‐i‐n solar cells have been fabricated using a separate chamber photochemical vapor deposition system. The photocharacteristics of such cells have been modestly improved by the addition of a carbon‐alloyed graded‐band‐gap layer at the p(a‐SiC:H)/i(a‐Si:H) heterointerface. The best efficiency obtained for a glass/TCO (transparent conductive oxide)/p(a‐SiC:H)/i(a‐Si:H)/n(μc‐Si:H)/metal structure of this type was 11.2% for a 3×3 mm2 cell; other parameters were Voc=0.882 V, Isc=18.05 mA/cm2, and a fill factor (FF) of 0.702.