Progress in CuInSe2 and CuIn(Se,S)2 module development

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Abstract
The formation of thin films of copper indium diselenide (CIS) on 929 cm2 (12 in×12 in) substrates and subsequent processing into photovoltaic devices and monolithically‐interconnected modules is described. Improved temperature‐time profiles in the selenization step have resulted in solar cells with a total area conversion efficiency of 12.5%. The effect of Cu/In ratio on the performance of such devices is reported. Standard characterization techniques are described, and temperature‐dependent studies are shown to provide further valuable information. Device and material properties are also reported for the quaternary CuIn(Se,S)2. Successful module development required the solution of many area and scribing related problems, including the problem of adhesion. A new interconnect and module technology has been validated by the achievement of a 9.7% active area conversion efficiency for a 20 cell module. The projected performance of manufactured modules is discussed in terms of proven module efficiencies.

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