Hot Electron Effects in Landau Levels of MOS Inversion Layers
- 1 November 1979
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 47 (5) , 1417-1425
- https://doi.org/10.1143/jpsj.47.1417
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Quantum galvanomagnetic properties of n-type inversion layers on Si(100) MOSFETSurface Science, 1976
- Theory of Cyclotron Resonance Lineshape in a Two-Dimensional Electron SystemJournal of the Physics Society Japan, 1975
- Quantum Galvanomagnetic Effect inn-Channel Silicon Inversion Layers under Strong Magnetic FieldsProgress of Theoretical Physics Supplement, 1975
- Theory of Quantum Transport in a Two-Dimensional Electron System under Magnetic Fields. I. Characteristics of Level Broadening and Transport under Strong FieldsJournal of the Physics Society Japan, 1974
- Surfons and the Electron Mobility in Silicon Inversion LayersJapanese Journal of Applied Physics, 1974
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967