STM analysis of wet-chemically prepared H-Si(001) surface
- 1 July 1996
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 100-101, 440-443
- https://doi.org/10.1016/0169-4332(96)00316-9
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Scaling Analysis of SiO2/Si Interface Roughness by Atomic Force MicroscopyJapanese Journal of Applied Physics, 1994
- Principles of wet chemical processing in ULSI microfabricationIEEE Transactions on Semiconductor Manufacturing, 1991
- Plan-view transmission electron diffraction measurement of roughness at buried Si/SiO2 interfacesApplied Physics Letters, 1989