High-current pulse-doped GaInAs MESFET

14 April 1988

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 24 (8) , 498-499
https://doi.org/10.1049/el:19880338

Abstract

We report the DC and microwave performance of pulse-doped GaInAs power MESFETs. For a 0.7μm gate-length device, a maximum drain-current density of 870mA/mm and a peak transconductance of 325mS/mm were measured. A maximum stable gain of 11.7dB at 26 GHz, and an extrapolated f_t, of 33 GHz were obtained. These values are the highest reported for MESFETs having gates as long as 0.7 μm.

Keywords

26 TO 33 GHZ
11.7 DB
MESFET
DC PERFORMANCE
SOLID-STATE MICROWAVE DEVICE
PULSED DOPED POWER TRANSISTOR
0.7 MICRON
MICROWAVE PERFORMANCE
325 MS
PEAK TRANSCONDUCTANCE
SUBMICRON GATE LENGTH
GAINAS
III-V SEMICONDUCTORS

This publication has 1 reference indexed in Scilit:

Power Saturation Characteristics of GaAs/AlGaAs High Electron Mobility Transistors
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2005