Faceting of LPE GaAs grown on a misoriented Si(100) substrate
- 1 December 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 115 (1-4) , 145-149
- https://doi.org/10.1016/0022-0248(91)90728-n
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 2 references indexed in Scilit:
- Epitaxial lateral overgrowths of GaAs on (001) GaAs substrates by LPE: Growth behavior and mechanismJournal of Crystal Growth, 1990
- Epitaxial Lateral Overgrowth of GaAs on a Si SubstrateJapanese Journal of Applied Physics, 1989