A Comprehensive Optimization of InAlAs Molecular Beam Epitaxy for InGaAs / InAlAs HEMT Technology

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Abstract
The effects of the substrate temperature in the molecular beam epitaxy growth of on have been investigated. A strong dependence of the structural, electrical, and optical properties of films on the growth temperature has been found and optimized material can be grown at 530°C. The low substrate temperatures deteriorate the material quality due to insufficient growth kinetics, while the higher temperatures allow the formation of composition inhomogeneities which also deteriorate the structural, optical, and electrical characteristics of . Using buffers grown at 530°C, state‐of‐the‐art high electron mobility transistors were fabricated and showed reduced output conductance and no kink effect in the I(V) characteristics.

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