Long wavelength HgMnTe avalanche photodiodes
- 1 July 1992
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 10 (4) , 1599-1601
- https://doi.org/10.1116/1.586255
Abstract
Long wavelength avalanche photodiodes have been fabricated using bulk Hg1−xMnxTe (0.10<x<0.12) single crystals, grown by the traveling heater method. Avalanche multiplication gains (M) greater than 40 and 10 were obtained at wavelengths of 7 and 10.6 μm, respectively. The ionization coefficient ratio of electrons to holes was determined experimentally from the measurements of the excess noise versus the avalanche multiplication factor. At both wavelengths, the ionization coefficient ratio was found to be approximately 12.This publication has 0 references indexed in Scilit: