Near band-edge photoluminescence in relaxed Si1−xGex layers
- 23 October 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 67 (17) , 2488-2490
- https://doi.org/10.1063/1.114617
Abstract
Near band‐gap photoluminescence was observed at low temperatures from relaxed Si1−xGex layers with 0.17<x1−xGex layers. Excitons bound to phosphorous and boron were also observed as was free exciton recombination.Keywords
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