Photoemission study of low pressure chemical vapor deposited and reactively sputtered titanium nitride in W/TiN/Si
- 1 May 1992
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 10 (3) , 1218-1220
- https://doi.org/10.1116/1.585891
Abstract
Low-pressure chemical vapor deposited (LPCVD) tungsten has been deposited onto LPCVD grown and reactively sputtered titanium nitride (TiN) films. The x-ray photoelectron spectroscopy depth profiles and the chemical analysis suggest that the chemical interaction of TiN with W and with the Si/SiO2 substrates tends to be minimal.This publication has 0 references indexed in Scilit: