Internal quantum efficiency of laser diodes
- 8 October 1992
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 28 (21) , 1991-1992
- https://doi.org/10.1049/el:19921276
Abstract
The internal quantum efficiency of laser diodes is determined from a consideration of current flow at threshold, and the corresponding quasi-Fermi level separation is used to evaluate the magnitude of all current components. The internal quantum efficiency is shown to be a strong function of temperature and cavity length. The results for single, multiple and strained quantum well structures are compared.Keywords
This publication has 2 references indexed in Scilit:
- Small-signal intensity modulation response of a single-quantum-well laserPublished by SPIE-Intl Soc Optical Eng ,1992
- Long-Wavelength Semiconductor LasersPublished by Springer Nature ,1986