Asymmetrical Profiles of Ion Implanted Phosphorus in Silicon

• 1 February 1979
• journal article
• Published by IOP Publishing in Japanese Journal of Applied Physics
• Vol. 18  (2) , 367-372
• https://doi.org/10.1143/jjap.18.367

Abstract

Keywords

• STOPPING POWER
• ION IMPLANTATION
• STANDARD DEVIATION
• GAUSSIAN DISTRIBUTION
• SECONDARY ION MASS SPECTROMETRY
• PHOSPHORUS