Novel shallow junction technology using decaborane (B/sub 10/H/sub 14/)
- 24 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 435-438
- https://doi.org/10.1109/iedm.1996.553620
Abstract
We have developed the first ever low-energy, high-dosage boron ion implantation technology using a decaborane (B/sub 10/H/sub 14/) molecule. Since B/sub 10/H/sub 14/ consists of ten boron atoms, they are implanted with about a one-tenth lower effective acceleration energy and a ten times higher effective beam current compared with those of boron. Using this implantation, we achieved an ultra-shallow 39-nm-deep junction with 1.5 k/spl Omega//sq. To demonstrate the effect and feasibility for semiconductor devices, we have fabricated a high-performance 0.15-/spl mu/m PMOS device with excellent resistance to short-channel effects.Keywords
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