Structure-property relationships in heteroepitaxial InAs and InSb thin films
- 1 March 1979
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 58 (1) , 49-54
- https://doi.org/10.1016/0040-6090(79)90207-4
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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- Physical processes in epitaxial growthThin Solid Films, 1971
- The Chemical Polishing of Sapphire and MgAl SpinelJournal of the Electrochemical Society, 1971
- Epitaxial indium arsenide by vacuum evaporationSolid-State Electronics, 1970
- Notizen: Untersuchungen über InAs-Epitaxieschichten auf GaAs-Substraten Semi-empirical Molecular Orbital Energy Levels of the Hexammine and Chloroammine Complexes of Co(IV)Zeitschrift für Naturforschung A, 1967
- Eigenschaften aufgedampfter InSb- und InAs-SchichtenZeitschrift für Naturforschung A, 1961
- Aufdampfschidhten aus halbleitenden III-V-VerbindungenZeitschrift für Naturforschung A, 1958