Negative Resistance Characteristics and Oscillation Phenomena in Si Diodes

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Abstract
Examining the forward characteristic of a new type of Si diode, it was found that the diode showed a negative resistance characteristic at room temperature. This new type diode was formed from material–which was originally very high resistivity and contained proper concentration of trapping centers– into structures that injected one or two kinds of carriers. The diode not only shows the negative resistance characteristic, but also exhibits coherent oscillations when placed in a magnetic field applied perpendicularly to the forward current. Explanations for these phenomena are proposed by assuming the existence of narrow streams for the current.

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