Stress-induced vertical confinement of light in bulk GaAs and Si substrates
- 1 October 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 8 (10) , 1358-1360
- https://doi.org/10.1109/68.536654
Abstract
We propose a new waveguide structure that can be formed on bulk semiconductor substrates without requiring any epitaxial or separate cladding layers for vertical confinement of light. In the proposed structure, vertical confinement of light is achieved via a photoelastic effect in semiconductor induced by thin-film stress, and lateral confinement is obtained by a semiconductor mesa. We have carried out numerical analyses on the stress distribution, dielectric constant changes, and mode profiles at 1.3 /spl mu/m or 1.55 /spl mu/m wavelength in GaAs or Si mesas. The results show that the proposed structure can support vertical modes with the amount of stress that can be obtained from typical thin-film/semiconductor interfaces.Keywords
This publication has 6 references indexed in Scilit:
- Silicon on insulator photoelastic optical waveguide and polarizerApplied Physics Letters, 1995
- Low loss single-mode optical waveguides with large cross-section in standard epitaxial siliconIEEE Photonics Technology Letters, 1994
- Optical waveguides in SIMOX structuresIEEE Photonics Technology Letters, 1991
- Photoelastic effects on the emission patterns of InGaAsP ridge-waveguide lasersIEEE Journal of Quantum Electronics, 1989
- Photoelastic channel optical waveguides in epitaxial GaAs layersElectronics Letters, 1980
- Photoelastic waveguides and their effect on stripe-geometry GaAs/Ga1−xAlxAs lasersJournal of Applied Physics, 1979