Anode hole injection and trapping in silicon dioxide
- 1 July 1996
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 80 (1) , 304-317
- https://doi.org/10.1063/1.362821
Abstract
Hole injection into silicon dioxide films from the polycrystalline-silicon anode or from the anode/oxide interface is demonstrated to unequivocally occur for any case where electrons are present in the oxide conduction band and where the average electric field in the oxide exceeds 5 MV/cm (thick-film limit) or the voltage drop across the oxide layer is at least 8 V (thin-film limit). The hole generation is directly shown to be related to the appearance of hot electrons with kinetic energies greater than 5 eV in the oxide conduction band near the anode region. Monte Carlo simulations confirm that the electron energy distribution at the anode is the controlling variable and that hot hole injection occurs mostly over the anode/oxide energy barrier.This publication has 58 references indexed in Scilit:
- Correlation of dielectric breakdown with hole transport for ultrathin thermal oxides and N2O oxynitridesApplied Physics Letters, 1995
- Threshold energies of high-field-induced hole currents and positive charges in SiO2 layers of metal-oxide-semiconductor structuresJournal of Applied Physics, 1994
- Metal-oxide-semiconductor field-effect-transistor substrate current during Fowler–Nordheim tunneling stress and silicon dioxide reliabilityJournal of Applied Physics, 1994
- Hole injection SiO/sub 2/ breakdown model for very low voltage lifetime extrapolationIEEE Transactions on Electron Devices, 1994
- The relation between positive charge and breakdown in metal-oxide-silicon structuresJournal of Applied Physics, 1987
- Substrate hole current and oxide breakdownApplied Physics Letters, 1986
- SiO2-induced substrate current and its relation to positive charge in field-effect transistorsJournal of Applied Physics, 1986
- Model for the generation of positive charge at the Si-interface based on hot-hole injection from the anodePhysical Review B, 1985
- The effect of gate metal and SiO2 thickness on the generation of donor states at the Si-SiO2 interfaceJournal of Applied Physics, 1985
- Investigation of the SiO2-induced substrate current in silicon field-effect transistorsJournal of Applied Physics, 1985