K-band low-noise amplifiers using 0.18 /spl mu/m CMOS technology
- 30 March 2004
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Wireless Components Letters
- Vol. 14 (3) , 106-108
- https://doi.org/10.1109/lmwc.2004.825175
Abstract
Two K-Band low-noise amplifiers (LNAs) are designed and implemented in a standard 0.18 μm CMOS technology. The 24 GHz LNA has demonstrated a 12.86 dB gain and a 5.6 dB noise figure (NF) at 23.5 GHz. The 26 GHz LNA achieves an 8.9 dB gain at the peak gain frequency of 25.7 GHz and a 6.93 dB NF at 25 GHz. The input referred third-order intercept point (IIP3) is >+2 dBm for both LNAs with a current consumption of 30 mA from a 1.8 V power supply. To our knowledge, the LNAs show the highest operation frequencies ever reported for LNAs in a standard CMOS process.Keywords
This publication has 3 references indexed in Scilit:
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