Growth and Magnetic Properties of Epitaxial Fe(100) on S-Passivated GaAs(100)
- 3 April 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 74 (14) , 2764-2767
- https://doi.org/10.1103/physrevlett.74.2764
Abstract
This paper proposes a new technique for the epitaxial growth of Fe on GaAs(100) which eliminates the problems of substrate interdiffusion through the overlayer. S-passivation of the GaAs(100) surface prior to Fe overgrowth is shown to be an effective way of inhibiting the interdiffusion of As and Ga into the Fe overlayer. The resulting Fe layer is found to grow in a bcc (100) orientation and is ferromagnetic for coverages >4 monolayers.Keywords
This publication has 20 references indexed in Scilit:
- Scanning tunneling microscopy of doping and compositional III–V homo- and heterostructuresJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Deposition of CaF2 and GaF3 on sulfur passivated GaAs(111)A, 100, and (111)B surfacesJournal of Applied Physics, 1992
- New surface passivation method for GaAs and its effect on the initial growth stage of a heteroepitaxial ZnSe layerApplied Surface Science, 1992
- Epitaxial Growth of Al on (NH4)2Sx-Treated GaAsJapanese Journal of Applied Physics, 1990
- Investigations of ammonium sulfide surface treatments on GaAsJournal of Vacuum Science & Technology B, 1989
- New approaches to epitaxy of transition metals and rare earths: Heteroepitaxy on lattice-matched buffer films on semiconductors (invited)Journal of Applied Physics, 1988
- Nearly ideal electronic properties of sulfide coated GaAs surfacesApplied Physics Letters, 1987
- Properties of Fe single-crystal films grown on (100)GaAs by molecular-beam epitaxyJournal of Applied Physics, 1987
- Simultaneous epitaxy and substrate out-diffusion at a metal-semiconductor interface: Fe/GaAs(001)-c(8×2)Physical Review B, 1986
- Interface chemistry of metal-GaAs Schottky-barrier contactsApplied Physics Letters, 1979