GaAs Inversion-Base Bipolar Transistor (GaAs IBT) with Graded Emitter Barrier
- 1 June 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (6A) , L1154
- https://doi.org/10.1143/jjap.27.l1154
Abstract
In the GaAs inversion-baser bipolar transistor, the graded layer was introduced to the emitter barrier. It was proved that the graded layer decreased the effective barrier height of the emitter barrier and enhanced the electron flow from the emitter to the collector. These effects of the graded layer improved the current gain of the GaAs IBT by two orders of magnitude.Keywords
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