Depth profile of antimony implanted into diamond

1 September 1979

journal article
research article
Published by AIP Publishing in Journal of Applied Physics

Vol. 50 (9) , 5731-5735
https://doi.org/10.1063/1.326710

Abstract

The depth profiles of 350‐keV ¹²¹Sb ions implanted at room temperature into diamonds were determined from neutron‐activation‐layer‐removal experiments. Profiles for both random and aligned (〈111〉) implantations were measured. The distribution of antimony ions implanted under channeling conditions was found to be centered somewhat deeper in the crystal than that of Sb ions implanted into a nonaligned diamond. The distribution tail extends in the case of channel implantation far into the crystal, well beyond the region of measurable damage.

This publication has 3 references indexed in Scilit:

Semiconducting diamond
Physica Status Solidi (a), 1975
Nuclear data sheets for A = 122
Nuclear Data Sheets, 1972
Implantation profiles of ³²P channeled into silicon crystals
Canadian Journal of Physics, 1968