Metal-semiconductor fluctuation in the Sn adatoms in the Si(111)-Sn and Ge(111)-Sn (√3×√3)R30° reconstructions
- 15 November 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 52 (20) , R14352-R14355
- https://doi.org/10.1103/physrevb.52.r14352
Abstract
The two components of the Sn 4d core level in the Si(111)-Sn and Ge(111)-Sn (√3×√3)R30° structures are proposed to arise from semiconductor-metal fluctuations in the Sn adatom layer. Adsorption of potassium on the Si(111)-Sn (√3×√3)R30° surface suppresses the metallic component and shifts the tin into a purely semiconducting phase with a filled dangling bond state.Keywords
This publication has 1 reference indexed in Scilit:
- Photoemission spectroscopy at MAX‐LabSynchrotron Radiation News, 1991