The Chemical Polishing of Germanium
- 1 January 1962
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 109 (2) , 120-123
- https://doi.org/10.1149/1.2425341
Abstract
The mode of action of the components of the polishing solution CP4 has been elucidated. The initiation of dissolution is dependent on the state of the germanium surface and the concentration of bromine. The final etch rate is limited by the diffusion of hydrofluoric acid to the germanium surface and even though the oxidizing agent, nitric acid, is in excess, the surface is free of detectable oxide. A difference in reactivity between ground and chemically polished surfaces has been demonstrated. Certain observations relevant to the practice of etching are made.Keywords
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