HIGH TEMPERATURE1H NMR IN a-Si : H
- 1 October 1981
- journal article
- Published by EDP Sciences in Le Journal de Physique Colloques
- Vol. 42 (C4) , C4-725
- https://doi.org/10.1051/jphyscol:19814158
Abstract
Pulsed NMR measurements of 1H have been employed to study the chemical bonding and diffusion of hydrogen atoms in hydrogenated amorphous silicon (a-Si : H) films at elevated temperatures (20-530°C). The spin-lattice relaxation time T1 is observed to go through a sharp drop above ~400°C. The previously observed low temperature T1 minimum near 30K is essentially unaffected by annealing at temperatures up to ~500°C where over 50% of the hydrogen has evolvedKeywords
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