Technological and physical aspects of the main EL2 defect in GaAs
- 1 May 1984
- journal article
- Published by Springer Nature in Czechoslovak Journal of Physics
- Vol. 34 (5) , 409-414
- https://doi.org/10.1007/bf01590082
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Intracenter transitions in the dominant deep level (EL2) in GaAsApplied Physics Letters, 1983
- Theoretical study of native defects in III-V semiconductorsPhysical Review B, 1983
- Origin of the 0.82-eV electron trap in GaAs and its annihilation by shallow donorsApplied Physics Letters, 1982
- Bridgman‐Type Apparatus for the Study of Growth‐Property Relationships: Arsenic Vapor Pressure ‐ GaAs Property RelationshipJournal of the Electrochemical Society, 1982
- Optical assessment of the main electron trap in bulk semi-insulating GaAsApplied Physics Letters, 1981
- Spectroscopies thermique et optique des niveaux profonds : Application à l'étude de leur relaxation de réseauRevue de Physique Appliquée, 1980
- Stress spectra of defects in diamondProceedings of the Physical Society, 1965