Effects of Oxygen-Potential-Controlled Annealing on the Superconducting Properties of (Bi, Pb)₂Sr₂Ca₂Cu₃O_y Thin Films

1 January 1990

journal article
Published by IOP Publishing in Japanese Journal of Applied Physics

Vol. 29 (1A) , L36
https://doi.org/10.1143/jjap.29.l36

Abstract

The oxygen potential of thin films consisting of monophasic (Bi, Pb)₂Sr₂Ca₂Cu₃O_y was controlled by annealing them under various oxygen partial pressures. The T _c of (Bi, Pb)₂Sr₂Ca₂Cu₃O_y was found to decrease monotonously with decreasing oxygen potential. However, T _c did not change when annealed under higher oxygen pressure up to 2.9×10⁴ torr. The carrier concentration was found to change with oxygen partial pressure, implying that oxygen supplies the carrier. An optimum range of the carrier concentration exists for attaining the highest T _c. This finding is consistent with those of other high T _c hole-type superconductors.

Keywords

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Effects of Oxygen-Potential-Controlled Annealing on the Superconducting Properties of (Bi, Pb)2Sr2Ca2Cu3Oy Thin Films

Abstract

Keywords

Effects of Oxygen-Potential-Controlled Annealing on the Superconducting Properties of (Bi, Pb)₂Sr₂Ca₂Cu₃O_y Thin Films