Diffusion of interstitial impurities in germanium and silicon
- 1 January 1962
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 23 (1-2) , 154-156
- https://doi.org/10.1016/0022-3697(62)90069-0
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- The effect of ion pair and ion triplet formation on the solubility of lithium in germanium—effect of gallium and zincJournal of Physics and Chemistry of Solids, 1958
- On the permeation of hydrogen and helium in single crystal silicon and germanium at elevated temperaturesPhysica, 1956
- Mobility of Impurity Ions in Germanium and SiliconPhysical Review B, 1954