Molecular-beam epitaxial growth and characterization of pseudomorphic InAs/In0.52Al0.48 As quantum wells
- 1 March 1988
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 6 (2) , 617-619
- https://doi.org/10.1116/1.584414
Abstract
The evolution of the structural and optical quality of molecular-beam epitaxial (MBE) grown InAs/In0.52Al0.48As pseudomorphic quantum wells with increasing well thickness has been analyzed by transmission electron microscopy (TEM) and photoluminescence measurements. TEM was used to assess the commensurability of the samples as well as to confirm the build up of stress as the InAs layer is made thicker. Under our growth conditions, intense intrinsic photoluminescence is observed for InAs layers as thick as 30 Å. Beyond this thickness a deterioration of the photoluminescence characteristics occurs due to roughening of the interfaces rather than to relaxation of the InAs lattice.This publication has 0 references indexed in Scilit: