Photoconductivity and Photo-Hall Effect of p-Type InSe Single Crystals
- 1 May 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (5) , L343-346
- https://doi.org/10.1143/jjap.20.l343
Abstract
Measurements of photoconductivity and photo-Hall effect have been made on Zn-doped p-type InSe in the temperature range from 220 to 330 K. The results are interpreted by a two-carrier model under illumination assuming that Δ n=Δ p, where Δ n and Δ p are the photogenerated carrier concentration of electrons and holes, respectively. The obtained mobility ratio b is determined as 9.5×10-2 T 0.7, and the temperature dependence of the hole mobility can be well fitted by the model developed by Schmid (Nuovo Cimento B21 (1974) 258).Keywords
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