Improvement in very thin gate oxide integrity by ion implantation
- 1 April 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 4 (4) , 94-95
- https://doi.org/10.1109/EDL.1983.25661
Abstract
It has been found that implanting silicon substrates prior to oxidation considerably improves the quality of very thin gate oxides (70 Å). Data is presented on leakage characteristics and breakdown distributions of these oxides.Keywords
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