Evidence for sequential tunnelling and charge build-up in double barrier resonant tunnelling devices
- 31 December 1988
- journal article
- Published by Elsevier in Surface Science
- Vol. 196 (1-3) , 404-409
- https://doi.org/10.1016/0039-6028(88)90718-2
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Comment on ‘‘Observation of intrinsic bistability in resonant-tunneling structures’’Physical Review Letters, 1987
- Resonant tunneling in magnetic field: Evidence for space-charge buildupPhysical Review B, 1987
- Equivalence between resonant tunneling and sequential tunneling in double-barrier diodesApplied Physics Letters, 1987
- Observation of intrinsic bistability in resonant tunneling structuresPhysical Review Letters, 1987
- Observation by resonant tunneling of high-energy states in GaAs-As quantum wellsPhysical Review B, 1986
- Resonant magnetotunneling in GaAlAs-GaAs-GaAlAs heterostructuresPhysical Review B, 1986
- Stable and unstable current-voltage measurements of a resonant tunneling heterostructure oscillatorApplied Physics Letters, 1985
- Frequency limit of double-barrier resonant-tunneling oscillatorsApplied Physics Letters, 1985
- Quantum well oscillatorsApplied Physics Letters, 1984
- Physics of resonant tunneling. The one-dimensional double-barrier casePhysical Review B, 1984