Room temperature operation of GaInAs-GaInAsP-InP SCH multiquantum-film laser with narrow wire-like active region
- 1 March 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 3 (3) , 191-192
- https://doi.org/10.1109/68.79749
Abstract
GaInAs-GaInAsP-InP SCH (separate-confinement heterostructure) multiquantum-film lasers with approximately 100-nm-wide wirelike active regions were fabricated by two-step low-pressure organometallic vapor-phase epitaxy (LP-OMVPE) growth and wet chemical etching and operated at room temperature. An increase in the threshold current density in such lasers was drastically reduced by using a preheating process in hydrogen atmosphere and a thin InP cover layer growth prior to the regrowth of a GaInAsP optical confinement layer. The fabrication processes presented can be very effective for realization of room-temperature operation of long-wavelength quantum-wire and quantum-box lasers based on GaInAs-InP materials.<>Keywords
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