In-Plane Photocurrent Spectroscopy of Undoped GaAs/AlAs Quantum Well Heterostructures
- 1 October 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (10A) , L1832-1834
- https://doi.org/10.1143/jjap.27.l1832
Abstract
Photocurrent conducting parallel to the undoped GaAs/AlAs quantum well layers increases due to the increased number of photogenerated carriers by excitonic resonance absorption. This offers a simple and sensitive means to measure excitonic absorption spectral features without substrate removal and allows us to observe a sharp resonance absorption peak with a 15 meV linewidth at room temperature for the lowest heavy-hole free-excitonic transition in a 7.0 nm-wide GaAs single quantum well. Heavy-hole free-excitonic transitions associated with up to third-order quantized states are also observed.Keywords
This publication has 9 references indexed in Scilit:
- Modified excitonic resonances in GaAs/AlAs multiple quantum well heterostructures with ultrathin barriersApplied Physics A, 1987
- Exciton binding energies from an envelope-function analysis of data on narrow quantum wells of integral monolayer widths inAs/GaAsPhysical Review B, 1987
- Photoconductivity of GaAsAlAs multiple quantum wells: Temperature dependent optical transitionsSuperlattices and Microstructures, 1986
- Magneto-optics in GaAs-As quantum wellsPhysical Review B, 1986
- Photocurrent spectroscopy in GaAs/AlGaAs multiple quantum wells under a high electric field perpendicular to the heterointerfaceApplied Physics Letters, 1986
- Photoreflectance characterization of interband transitions in GaAs/AlGaAs multiple quantum wells and modulation-doped heterojunctionsApplied Physics Letters, 1985
- Electronic structure of two-dimensional semiconductor systemsJournal of Luminescence, 1985
- Extrinsic photoluminescence from GaAs quantum wellsPhysical Review B, 1982
- Observation of Superlattice Effects on the Electronic Bands of Multilayer HeterostructuresPhysical Review Letters, 1981