Diffusion of Ion-Implanted Tin in Gallium Arsenide
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Annealing effect for heavily Sn-implanted GaAsJournal of Applied Physics, 1987
- Electronic Structure, Total Energies, and Abundances of the Elementary Point Defects in GaAsPhysical Review Letters, 1985
- Diffusion of tin in n-type GaAsJournal of Physics D: Applied Physics, 1978
- Properties of vacancy defects in GaAs single crystalsJournal of Applied Physics, 1975
- Diffusion of Tin in Gallium ArsenideJournal of Applied Physics, 1961