Abstract
The physical background of the method of temperature-modulated steady-state space-charge-limited currents is described. It is based on the measurement of the current-voltage characteristics together with the current activation energy-voltage dependence in the space-charge regime, i.e. the current and its charge due to the modulation of temperature are measured at a given applied voltage. The applicability of the method for the determination of the bulk density of electron states is illustrated on thin films of polycrystalline metal-free phthalocyanine, amorphous silicon and As2Se3.