Indirect-exchange interaction between localized moments in semiconductors
- 15 May 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 33 (10) , 7134-7138
- https://doi.org/10.1103/physrevb.33.7134
Abstract
A numerical technique is described for calculating the indirect-exchange interaction in semiconductors. Calculations have been performed for localized moments in a narrow-band-gap semiconductor and the results show that the indirect interaction alternates in magnitude as the distance between magnetic moments is increased. It is suggested that the formation of a spin-glass phase in diluted magnetic semiconductors may not be due to the frustration mechanism alone.Keywords
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