Spin-dependent Coulomb blockade in a silicon-on-insulator-based single-electron transistor
- 9 October 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (15) , 2355-2357
- https://doi.org/10.1063/1.1317540
Abstract
We report low-temperature conductance measurement on a Coulomb-blockaded dot in a silicon-on-insulator-based single-electron transistor with in-plane side gates. The linear conductance for 4.2 K at zero magnetic field exhibits up to three paired peaks, indicating simple alternating odd (spin 1/2)-even(spin 0) filling. Three intrapair spacings are found to be nearly a constant value, corresponding to the single charging energy U, whereas two interpair spacings are different which are associated with U+ΔE1 and U+ΔE2, i.e., successive quantized level spacings added to U. The quantized level spacings were also revealed in the nonlinear current staircases.Keywords
This publication has 8 references indexed in Scilit:
- Single-electron charging in doped silicon double dotsSemiconductor Science and Technology, 1999
- Zero-dimensional states in a quantum dot, formed at threshold in a disordered submicron silicon transistorSemiconductor Science and Technology, 1999
- Enhancement of Coulomb blockade and tunability by multidot coupling in a silicon-on-insulator-based single-electron transistorApplied Physics Letters, 1999
- Single electron effects in silicon quantum dots in a MOSFET structureMicroelectronic Engineering, 1999
- Excitation Spectra of Circular, Few-Electron Quantum DotsScience, 1997
- Few-electron ground states of charge-tunable self-assembled quantum dotsPhysical Review B, 1997
- Shell Filling and Spin Effects in a Few Electron Quantum DotPhysical Review Letters, 1996
- Coulomb blockade in a silicon tunnel junction deviceApplied Physics Letters, 1994