GaAs buried heterostructure vertical cavity top-surface emitting lasers
- 1 June 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 27 (6) , 1386-1390
- https://doi.org/10.1109/3.89955
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Low-threshold surface-emitting laser diodes with distributed Bragg reflectors and current blocking layersApplied Physics Letters, 1990
- Continuous wave top surface emitting quantum well lasers using hybrid metal/semiconductor reflectorsElectronics Letters, 1990
- 90% coupling of top surface emitting GaAs/AlGaAs quantum well laser output into 8 µm diameter core silica fibreElectronics Letters, 1990
- Top-surface-emitting GaAs four-quantum-well lasers emitting at 0.85 μmElectronics Letters, 1990
- Surface-emitting laser diode with distributed Bragg reflector and buried heterostructureElectronics Letters, 1990
- Room-temperature continuous-wave vertical-cavity surface-emitting GaAs injection lasersApplied Physics Letters, 1989
- Low-threshold electrically pumped vertical-cavity surface-emitting microlasersElectronics Letters, 1989
- Buried Heterostructure GaAs/GaAlAs Distributed Bragg Reflector Surface Emitting Laser with Very Low Threshold (5.2 mA) under Room Temperature CW ConditionsJapanese Journal of Applied Physics, 1989
- Circular buried heterostructure (CBH) GaAlAs/GaAs surface emitting lasersIEEE Journal of Quantum Electronics, 1987