Γ to X transport of photoexcited electrons in type II GaAs/AlAs multiple quantum well structures
- 24 April 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (17) , 1681-1683
- https://doi.org/10.1063/1.101302
Abstract
We report novel femtosecond time‐resolved measurements performed on staggered type II GaAs/AlAs multiple quantum well structures. Photoexcited electrons were determined to transfer from the Γ valley of the GaAs layers to the X valleys of the AlAs in 100 and 400 fs for 8‐ and 11‐monolayer‐thick GaAs samples, respectively.Keywords
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