Recombinaison sur les Pièges à deux Niveaux dans les Semi-Conducteurs†
- 1 July 1958
- journal article
- research article
- Published by Taylor & Francis in Journal of Electronics and Control
- Vol. 5 (1) , 15-18
- https://doi.org/10.1080/00207215808953883
Abstract
The derivation of the recombination statistics of excess carriers in semiconductors through a Hall-Shockley-Read mechanism with two non-independant levels in the forbidden gap is given. Two examples are outlined : low-level injection lifetime and generation rate for p-n junction charge space.Keywords
This publication has 4 references indexed in Scilit:
- Carrier Generation and Recombination in P-N Junctions and P-N Junction CharacteristicsProceedings of the IRE, 1957
- Statistics of the Charge Distribution for a Localized Flaw in a SemiconductorPhysical Review B, 1957
- The Statistics of Divalent Impurity Centres in a SemiconductorProceedings of the Physical Society. Section B, 1956
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952