Electro-optic behavior and dielectric constants of ZnGeP2and CuGaS2

Abstract
The constant-strain electro-optic coefficients and dielectric constants of two ternary semiconductors (CuGaS2 and ZnGeP2) with the chalcopyrite structure have been measured. The magnitudes of the coefficients are similar to those of the binary analogs (ZnS and GaP). However, the signs of the CuGaS2 coefficients appear to be positive whereas the ZnS coefficient is negative. The ZnGeP2 coefficients are found to have opposite signs to each other.