Injection-Stimulated Vacancy Reordering in p-Type Silicon at 76°K

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Abstract
Electron injection into p‐type silicon at 76°K has been observed to reduce the lifetime degradation rate due to 60Co gamma irradiation at 76°K. By comparing isochronal annealing data between 76° and 300°K with similar data obtained by Watkins in EPR studies, the lifetime degradation at 76°K is seen to be due primarily to recombination through vacancies. Since the activation energy of motion of silicon vacancies is known to depend strongly on charge state, the injection‐stimulated reduction in degradation rate at 76°K has been related to vacancy reordering which occurs when the injected electron density is sufficiently large to modify the vacancy charge state from neutral (mobile above 160°K) to negative (mobile above 60°K). Quantitative estimates of the vacancy‐reordering rate in the presence of excess electrons show this model to be consistent with the observed phenomena.

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