Design Considerations of a 3.1 - 3.5 GHz GaAs FET Feedback Amplifier
- 1 January 1972
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Recent GaAs FET devices have exhibited promising capabilities for microwave amplification. Circuit designers, however, found two problems with the FET applications, namely, the characteristically high input/output impedances are difficult to match into a 5Ω system and the potential instabilities that exists at frequencies below 4 GHz. This paper describes development work done on feedback circuits in designing an unconditionally stable FET amplifier in the 3.1-3.5 GHz frequency range by using conventional microstrip techniques, and also investigates the effect of feedback components on noise and output capabilities.Keywords
This publication has 2 references indexed in Scilit:
- Two scattering matrix programs for active circuit analysisIEEE Transactions on Circuit Theory, 1971
- Design and performance of the GaAs FETPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1970