Silicon diffusion at polycrystalline-Si/GaAs interfaces
- 1 December 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (11) , 1208-1210
- https://doi.org/10.1063/1.96330
Abstract
Polycrystalline-Si/GaAs interfaces have been prepared by depositing hydrogenated amorphous Si (a-Si:H) onto GaAs in a silane plasma at 450 °C and annealing at temperatures between 600 and 1020 °C. Rutherford backscattering, secondary ion mass spectroscopy, and transmission electron microscopy show that the resulting polycrystalline-Si/GaAs interface is metallurgically stable when the Si is undoped while significant interdiffusion occurs when 12 at. % As is added to the Si. The data are consistent with the Greiner/Gibbons theory [Appl. Phys. Lett. 44, 750 (1984)] that high concentrations of Si diffuse in GaAs in the form of Si-Si substitutional pairs via Ga and As vacancies.Keywords
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